ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer

被引：17

作者：

Chang, S. P. ^{[1
]}

Chang, S. J. ^{[1
]}

Chiou, Y. Z. ^{[2
]}

Lu, C. Y. ^{[1
]}

Lin, T. K. ^{[1
]}

Kuo, C. F. ^{[1
]}

Chang, H. M. ^{[1
]}

Liaw, U. H. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Ctr Micronano Sci & Technol, Tainan 70101, Taiwan

[2] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

[3] China Inst Technol, Dept Avion Sci, Hsinchu 31214, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 02期

关键词：

nano-island; MBE; GaN buffer; ZnO; Si wafer;

D O I：

10.1016/j.jcrysgro.2007.10.029

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25 x 10(9) cm(-2), 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：290 / 294

页数：5

共 29 条

[1] Photodetectors on the base of ZnO thin films
Aghamalyan, NR
Hovsepyan, RK
Poghosyan, AR
Lazaryan, VG
[J]. PHOTOREFRACTIVE FIBER AND CRYSTAL DEVICES: MATERIALS, OPTICAL PROPERTIES, AND APPLICATIONS X, 2004, 5560 : 235 - 240
[2] A comparison of plasma-activated N2/O2 and N2O/O2 mixtures for use in ZnO:N synthesis by chemical vapor deposition
Barnes, TM
Leaf, J
Hand, S
Fry, C
Wolden, CA
[J]. JOURNAL OF APPLIED PHYSICS, 2004, 96 (12) : 7036 - 7044
[3] Photoluminescence and ultraviolet lasing of polycrystalline ZnO thin films prepared by the oxidation of the metallic Zn
Cho, SL
Ma, J
Kim, YK
Sun, Y
Wong, GKL
Ketterson, JB
[J]. APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2761 - 2763
[4] CHOI JH, 2005, J CRYST GROWTH, V478, P218
[5] MIGRATION-ENHANCED EPITAXY OF GAAS AND ALGAAS
HORIKOSHI, Y
KAWASHIMA, M
YAMAGUCHI, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1988, 27 (02): : 169 - 179
[6] p-ZnO/n-GaN heterostructure ZnO light-emitting diodes -: art. no. 222101
Hwang, DK
Kang, SH
Lim, JH
Yang, EJ
Oh, JY
Yang, JH
Park, SJ
[J]. APPLIED PHYSICS LETTERS, 2005, 86 (22) : 1 - 3
[7] ZnO growth on Si by radical source MBE
Iwata, K
Fons, P
Niki, S
Yamada, A
Matsubara, K
Nakahara, K
Tanabe, T
Takasu, H
[J]. JOURNAL OF CRYSTAL GROWTH, 2000, 214 : 50 - 54
[8] High electron mobility of epitaxial ZnO thin films on c-plane sapphire grown by multistep pulsed-laser deposition
Kaidashev, EM
Lorenz, M
von Wenckstern, H
Rahm, A
Semmelhack, HC
Han, KH
Benndorf, G
Bundesmann, C
Hochmuth, H
Grundmann, M
[J]. APPLIED PHYSICS LETTERS, 2003, 82 (22) : 3901 - 3903
[9] Homoepitaxial growth of high-quality Zn-polar ZnO films by plasma-assisted molecular beam epitaxy
Kato, H
Sano, M
Miyamoto, K
Yao, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2003, 42 (8B): : L1002 - L1005
[10] Magnetron sputtering growth and characterization of single crystal ZnO thin films on Si using GaN interlayer
Kim, Il-Soo
Kim, Tae-Hwan
Kim, Sang Sub
Lee, Cheul-Ro
Lee, Byung-Teak
[J]. JOURNAL OF CRYSTAL GROWTH, 2007, 299 (02) : 295 - 298

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