ZnO epitaxial layers grown on nitridated Si(100) substrate with HT-GaN/LT-ZnO double buffer

被引：17

作者：

Chang, S. P. ^{[1
]}

Chang, S. J. ^{[1
]}

Chiou, Y. Z. ^{[2
]}

Lu, C. Y. ^{[1
]}

Lin, T. K. ^{[1
]}

Kuo, C. F. ^{[1
]}

Chang, H. M. ^{[1
]}

Liaw, U. H. ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Ctr Micronano Sci & Technol, Tainan 70101, Taiwan

[2] So Taiwan Univ Technol, Dept Elect Engn, Tainan 710, Taiwan

[3] China Inst Technol, Dept Avion Sci, Hsinchu 31214, Taiwan

来源：

JOURNAL OF CRYSTAL GROWTH | 2008年 / 310卷 / 02期

关键词：

nano-island; MBE; GaN buffer; ZnO; Si wafer;

D O I：

10.1016/j.jcrysgro.2007.10.029

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

ZnO epitaxial layers were successfully grown on nitridated Si(1 0 0) substrate with high-temperature (HT) GaN and low-temperature ZnO double buffer layers by molecular beam epitaxy. It was found that the HT-GaN buffer was crystalline with both hexagonal and cubic phases. It was also found that numerous cone-shaped nano-islands were formed on the ZnO epitaxial layers with density, average diameter and average height of 1.25 x 10(9) cm(-2), 300 nm and 150 nm, respectively. X-ray diffraction and photoluminescence results both indicate that quality of our ZnO epitaxial layers was good. (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：290 / 294

页数：5

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