Study of the stacking faults in a-plane GaN on r-plane sapphire grown by metal-organic chemical vapor deposition

被引：1
作者：
Fang, H. [1 ]
Sang, L. W. [1 ]
Zhu, W. X. [1 ]
Long, H. [1 ]
Yu, T. J. [1 ]
Yang, Z. J. [1 ]
Zhang, G. Y. [1 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
来源：
JOURNAL OF CRYSTAL GROWTH | 2011年 / 318卷 / 01期
关键词：
Cathodoluminescence; Planar defects; Transmission electron microscopy; Metalorganic vapor phase epitaxy; Nitrides; MULTIPLE-QUANTUM WELLS; GALLIUM NITRIDE; FILMS; DEPENDENCE; PRESSURE; EMISSION; LAYER;
D O I：
10.1016/j.jcrysgro.2010.10.214
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Optically specular a-plane GaN was grown on r-sapphire substrate by metal-organic chemical vapor deposition (MOCVD). Surface morphology and crystal structure anisotropic behavior related to defects with a specific distribution were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). Cathodoluminescence (CL) images and depth-profiling spectra show Basel stacking faults (BSFs) related emission at 3.42 eV, yellow band emission at 2.25 and 3.00 eV emission bands of the a-plane GaN. From the results of CL and transmission electron microscopy (TEM), the origin of the blue emission band was attributed to donor-acceptor pair (DAP) emission correlated with prismatic stacking faults (PSFs). (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：423 / 426
页数：4
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