Growth morphology and electronic structure of Na films on Si(111)-(7x7) and Si(111)-Na(3x1)

被引：21

作者：

Paggel, JJ

Neuhold, G

Haak, H

Horn, K

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Marburg, Zentrum Mat Wissensch, Fachbereich Phys & Wissenschaftliches, D-35032 Marburg, Germany

[3] Univ Marburg, Fachbereich Phys, D-35032 Marburg, Germany

来源：

SURFACE SCIENCE | 1998年 / 414卷 / 1-2期

关键词：

alkali metals; low energy electron diffraction (LEED); low index single crystal surfaces; metal-semiconductor interfaces; photoelectron spectroscopy; scanning tunneling microscopy; semiconducting films; semiconducting surfaces; silicon; soft X-ray photoelectron spectroscopy;

D O I：

10.1016/S0039-6028(98)00514-7

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The growth of thin Na films on the clean Si(111)-(7 x 7) and the Si(lll)-Na(3 x 1) reconstructions is investigated using scanning tunnelling microscopy as well as core and valence level photoemission. The growth morphology as well as the evolving electronic structure of the overlayer on these different substrates is studied in derail. Tr is shown that the Na layer on both surface reconstructions is metallic at saturation coverage, but the presence of a distinct interfacial layer in a non-metallic state is demonstrated. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：221 / 235

页数：15

共 35 条

[1] SCANNING-TUNNELING-MICROSCOPY STUDY OF THE METAL-INDUCED SI(111)3X1 RECONSTRUCTION - EVIDENCE FOR DIMERIZED CHAIN FORMATION [J].