Development of a robust 50V 0.35 μm based smart power technology using trench isolation

被引：23

作者：

De Pestel, F ^{[1
]}

Moens, P ^{[1
]}

Hakim, H ^{[1
]}

De Vleeschouwer, H ^{[1
]}

Reynders, K ^{[1
]}

Colpaert, T ^{[1
]}

Colson, P ^{[1
]}

Coppens, P ^{[1
]}

Boonen, S ^{[1
]}

Bolognesi, D ^{[1
]}

Tack, A ^{[1
]}

机构：

[1] AMI Semicond Belgium BVBA, Technol Res & Dev, B-9700 Oudenaarde, Belgium

来源：

ISPSD'03: 2003 IEEE 15TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS PROCEEDINGS | 2003年

关键词：

D O I：

10.1109/ISPSD.2003.1225259

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a new 0.35 mum CMOS based smart power technology. The so-called 13T50 technology belongs to a series of intelligent interface technologies developed within AMI Semiconductor over the past years. This technology is suitable for applications up to 50 V, such as automotive, peripheral and consumer applications. Trench isolation is used to isolate the devices, substantially reducing the isolation area. The set of devices available within this technology consists of n-type and p-type CMOS and DMOS devices, bipolar transistors, a high voltage floating diode, passive components, OTP memory and a set of ESD protection structures. In the future, the technology will be extended also with a modular embedded flash memory.

引用

页码：182 / 185

页数：4

共 6 条

[1]

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[2]

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[3]

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[5]

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12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :335-338

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