TiO2 enhanced ultraviolet detection based on a graphene/Si Schottky diode

被引:45
作者
Zhu, Miao [1 ,2 ]
Zhang, Li [1 ]
Li, Xinming [3 ]
He, Yijia [1 ,2 ]
Li, Xiao [1 ,2 ]
Guo, Fengmei [1 ]
Zang, Xiaobei [1 ]
Wang, Kunlin [1 ]
Xie, Dan [4 ]
Li, Xuanhua [5 ]
Wei, Bingqing [5 ,6 ]
Zhu, Hongwei [1 ,2 ]
机构
[1] Tsinghua Univ, State Key Lab New Ceram & Fine Proc, Sch Mat Sci & Engn, Beijing 100084, Peoples R China
[2] Tsinghua Univ, Ctr Nano & Micro Mech, Beijing 100084, Peoples R China
[3] Natl Ctr Nanosci & Technol, Beijing 100190, Peoples R China
[4] Tsinghua Univ, Inst Microelect, TNList, Beijing 100084, Peoples R China
[5] Northwestern Polytech Univ, Sch Mat Sci & Engn, Xian 710072, Peoples R China
[6] Univ Delaware, Dept Mech Engn, Newark, DE 19716 USA
基金
美国国家科学基金会;
关键词
SILICON SOLAR-CELLS; EFFECTIVE INTERFACIAL LAYER; HIGH-RESPONSIVITY; OPTICAL-ABSORPTION; ENERGY-CONVERSION; BROAD-BAND; PHOTODETECTORS; PHOTOCATALYSIS; EFFICIENCY; OXIDE;
D O I
10.1039/c5ta00702j
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Graphene/Si has been proved to form a quality Schottky junction with high photoelectric conversion efficiency at AM 1.5. However, for the ultraviolet portion of the incident light, the photoelectric performance will degrade significantly due to severe absorption and recombination at the front surface. Herein, to realize enhanced ultraviolet detection with a graphene/Si diode, TiO2 nanoparticles (NPs, 3-5 nm) are synthesized and spin-coated on the graphene surface to improve the photoresponse in the ultraviolet region. According to our results, the conversion efficiency of the graphene/Si diode at 420 nm and 350 nm increases by 72.7% and 100% respectively with TiO2 coating. Then C-2-V measurements of both TiO2 and graphene/Si diode are performed to analyze the electronic band structure of the TiO2/graphene/Si system, based on which we finally present the enhancement mechanism of photodetection using TiO2 NPs.
引用
收藏
页码:8133 / 8138
页数:6
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