High-performance graphene/InSb heterojunction mid-infrared photogated diode

被引：2

作者：

Shimatani, Masaaki ^{[1
]}

Fukushima, Shoichiro ^{[1
]}

Ogawa, Shinpei ^{[1
]}

机构：

[1] Mitsubishi Electr Corp, Adv Technol R&D Ctr, 8-1-1 Tsukaguchi Honmachi, Amagasaki, Hyogo 6618661, Japan

来源：

INFRARED TECHNOLOGY AND APPLICATIONS XLVIII | 2022年 / 12107卷

关键词：

graphene; graphene photodetector; photogating; infrared sensor; mid-infrared; heterojunction; InSb; image sensor; HIGH-RESPONSIVITY; BROAD-BAND; LARGE-AREA; EPITAXIAL-GROWTH; PHOTODETECTORS; ULTRAHIGH; METAL; OXIDE;

D O I：

10.1117/12.2617386

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A high-performance graphene/InSb heterojunction mid-infrared (IR) photogated diode for use in IR image sensors was developed. This device exhibited low noise, owing to a significant reduction in the dark current, along with high responsivity. These characteristics are attributed to the heterojunction structure of the device and the associated photogating effect. The performance of this specimen was superior to those of conventional graphene-based IR sensors in the mid-IR wavelength range of 3-5 mu m. These results indicate that the combination of a simple graphene/InSb heterojunction and the photogating effect can produce IR image sensors with better detection performance than existing devices.

引用

页数：8

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