Enhanced photosusceptibility near Tc for the light-induced insulator-to-metal phase transition in vanadium dioxide

被引：217
作者：
Hilton, D. J.
Prasankumar, R. P.
Fourmaux, S.
Cavalleri, A.
Brassard, D.
El Khakani, M. A.
Kieffer, J. C.
Taylor, A. J.
Averitt, R. D.
机构：
[1] Los Alamos Natl Lab, Ctr Integrated Nanotechnol, Los Alamos, NM 87545 USA
[2] Univ Quebec, INRS Energie & Mat & Telecommun, Varennes, PQ J3X 1S2, Canada
[3] Univ Oxford, Dept Phys, Clarendon Lab, Oxford OX1 3PU, England
来源：
PHYSICAL REVIEW LETTERS | 2007年 / 99卷 / 22期
关键词：
D O I：
10.1103/PhysRevLett.99.226401
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
We use optical-pump terahertz-probe spectroscopy to investigate the near-threshold behavior of the photoinduced insulator-to-metal (IM) transition in vanadium dioxide thin films. Upon approaching T-c a reduction in the fluence required to drive the IM transition is observed, consistent with a softening of the insulating state due to an increasing metallic volume fraction (below the percolation limit). This phase coexistence facilitates the growth of a homogeneous metallic conducting phase following superheating via photoexcitation. A simple dynamic model using Bruggeman effective medium theory describes the observed initial condition sensitivity.
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页数：4
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共 25 条
[1]   Ultrafast optical and far-infrared quasiparticle dynamics in correlated electron materials [J].
Averitt, RD ;
Taylor, AJ .
JOURNAL OF PHYSICS-CONDENSED MATTER, 2002, 14 (50) :R1357-R1390
[2]  
BALBERG I, 1971, CONDUCTION LOW MOBIL, P77
[3]   Grain size effect on the semiconductor-metal phase transition characteristics of magnetron-sputtered VO2 thin films -: art. no. 051910 [J].
Brassard, D ;
Fourmaux, S ;
Jean-Jacques, M ;
Kieffer, JC ;
El Khakani, MA .
APPLIED PHYSICS LETTERS, 2005, 87 (05)
[4]   Calculation of various physics constants in heterogenous substances I Dielectricity constants and conductivity of mixed bodies from isotropic substances [J].
Bruggeman, DAG .
ANNALEN DER PHYSIK, 1935, 24 (07) :636-664
[5]   Band-selective measurements of electron dynamics in VO2 using femtosecond near-edge x-ray absorption -: art. no. 067405 [J].
Cavalleri, A ;
Rini, M ;
Chong, HHW ;
Fourmaux, S ;
Glover, TE ;
Heimann, PA ;
Kieffer, JC ;
Schoenlein, RW .
PHYSICAL REVIEW LETTERS, 2005, 95 (06)
[6]   Picosecond soft x-ray absorption measurement of the photoinduced insulator-to-metal transition in VO2 -: art. no. 153106 [J].
Cavalleri, A ;
Chong, HHW ;
Fourmaux, S ;
Glover, TE ;
Heimann, PA ;
Kieffer, JC ;
Mun, BS ;
Padmore, HA ;
Schoenlein, RW .
PHYSICAL REVIEW B, 2004, 69 (15) :153106-1
[7]   Evidence for a structurally-driven insulator-to-metal transition in VO2:: A view from the ultrafast timescale -: art. no. 161102 [J].
Cavalleri, A ;
Dekorsy, T ;
Chong, HHW ;
Kieffer, JC ;
Schoenlein, RW .
PHYSICAL REVIEW B, 2004, 70 (16) :1-4
[8]   Femtosecond structural dynamics in VO2 during an ultrafast solid-solid phase transition -: art. no. 237401 [J].
Cavalleri, A ;
Tóth, C ;
Siders, CW ;
Squier, JA ;
Ráksi, F ;
Forget, P ;
Kieffer, JC .
PHYSICAL REVIEW LETTERS, 2001, 87 (23) :237401-1
[9]   Phase coexistence in the metal-insulator transition of a VO2 thin film [J].
Chang, YJ ;
Koo, CH ;
Yang, JS ;
Kim, YS ;
Kim, DH ;
Lee, JS ;
Noh, TW ;
Kim, HT ;
Chae, BG .
THIN SOLID FILMS, 2005, 486 (1-2) :46-49
[10]   Mid-infrared properties of a VO2 film near the metal-insulator transition [J].
Choi, HS ;
Ahn, JS ;
Jung, JH ;
Noh, TW ;
Kim, DH .
PHYSICAL REVIEW B, 1996, 54 (07) :4621-4628
123