Investigation on the electrical properties of amorphous IZALO thin-film transistors

被引：1

作者：

Jia, Lanchao ^{[1
]}

Liu, Depeng ^{[1
]}

Yang, Hui ^{[1
]}

Su, Jinbao ^{[1
]}

Yi, Lixin ^{[1
]}

Zhang, Xiqing ^{[1
]}

机构：

[1] Beijing Jiaotong Univ, Key Lab Luminescence & Opt Informat, Minist Educ, Inst Optoelect Technol, Beijing 100044, Peoples R China

来源：

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS | 2020年 / 31卷 / 06期

基金：

中国国家自然科学基金;

关键词：

Thin film transistor; Oxide materials; Electrical properties; Subthreshold swing; LOW-TEMPERATURE; ZNO;

D O I：

10.1007/s10854-020-03049-8

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Indium-Zinc-Aluminum-Lithium Oxide (IZALO) films and thin-film transistors (TFTs) were fabricated by radio frequency magnetron sputtering in this paper. X-ray diffraction test data show that IZALO films annealed at 325 celcius in air atmosphere are amorphous. IZALO TFTs have excellent electrical properties with saturation mobility (mu(sat)) of 28.2 cm(2)/V s, on/off current ratio (I-on/I-off) of 1 x 10(9), off-state current (I-off) of 1 x 10(-12)A, subthreshold swing (SS) of 0.51 V/dec, and threshold voltage (V-TH) of 1.4V, respectively. The V-TH shifts of IZALO TFTs under positive bias and negative bias were investigated.

引用

页码：4867 / 4871

页数：5

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