Chemo-mechanical magneto-rheological finishing (CMMRF) of silicon for microelectronics applications

被引：66

作者：

Jain, V. K. ^{[2
]}

Ranjan, P. ^{[3
]}

Suri, V. K. ^{[3
]}

Komanduri, R. ^{[1
]}

机构：

[1] Oklahoma State Univ, Sch Mech & Aerosp Engn, Stillwater, OK 74078 USA

[2] Indian Inst Technol, Kanpur 208016, Uttar Pradesh, India

[3] Bhabha Atom Res Ctr, Bombay 400085, Maharashtra, India

来源：

CIRP ANNALS-MANUFACTURING TECHNOLOGY | 2010年 / 59卷 / 01期

关键词：

Non-traditional machining; Chemical mechanical planarization (CMP); Magneto-rheological finishing (MRF); CMP; SI3N4;

D O I：

10.1016/j.cirp.2010.03.106

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A new finishing process, namely, chemo-mechanical magneto-rheological finishing (CMMRF) was developed for polishing silicon blanks that combines the beneficial features of chemical mechanical polishing (CMP) and magneto-rheological finishing (MRF) without the detrimental effects of either process involved. Chemical reactions associated with CMP are used to enhance the finish quality while the magneto-rheological polishing fluid is used to control the magnitude of the forces acting on the workpiece that controls the material removal rates (MRR) and minimizes the surface integrity problems. An apparatus for CMMRF was designed and built for nanometric finishing of silicon substrates. This process is able to finish silicon blanks with nanometric finish, minimal surface defects, and higher removal rates. (C) 2010 CIRP.

引用

页码：323 / 328

页数：6