The physics of plasma-enhanced chemical vapour deposition for large-area coating: industrial application to flat panel displays and solar cells

被引:64
作者
Perrin, J
Schmitt, J
Hollenstein, C
Howling, A
Sansonnens, L
机构
[1] Unaxis Balzers AG, Cent R&D, FL-9496 Balzers, Liechtenstein
[2] Unaxis France SA, Display Technol, F-91120 Palaiseau, France
[3] Ecole Polytech Fed Lausanne, Ctr Rech Phys Plasmaaas, PPH Ecublens, CH-1015 Lausanne, Switzerland
关键词
D O I
10.1088/0741-3335/42/12B/326
中图分类号
O35 [流体力学]; O53 [等离子体物理学];
学科分类号
070204 ; 080103 ; 080704 ;
摘要
Designing plasma-enhanced chemical vapour deposition (PECVD) reactors to coat large-area glass plates (similar to1 m(2)) for flat panel display or solar cell manufacturing raises challenging issues in physics and chemistry as well as mechanical, thermal, and electrical engineering, and material science. In such reactive glow discharge plasma slabs, excited at RF frequency (from 13.56 MHz up to similar to 100 MHz), the thin-film deposition uniformity is determined by the gas flow distribution, as well as the RF voltage distribution along the electrodes, and by local plasma perturbations at the reactor boundaries. All these aspects can be approached by analytical and numerical modelling. Moreover, the film properties are largely determined by the plasma chemistry involving the neutral radicals contributing to film growth, the effect of ion bombardment, and the formation and trapping of dust triggered by homogeneous nucleation. This paper will review progress in this field, with particular emphasis on modelling developments.
引用
收藏
页码:B353 / B363
页数:11
相关论文
共 26 条
[1]   Plasma enhanced chemical vapor deposition: Modeling and control [J].
Armaou, A ;
Christofides, PD .
CHEMICAL ENGINEERING SCIENCE, 1999, 54 (15-16) :3305-3314
[2]   Effect of the nanoparticles on the structure and crystallization of amorphous silicon thin films produced by rf glow discharge [J].
Bertran, E ;
Sharma, SN ;
Viera, G ;
Costa, J ;
St'ahel, P ;
Cabarrocas, PRI .
JOURNAL OF MATERIALS RESEARCH, 1998, 13 (09) :2476-2479
[3]   Experimental evidence for nanoparticle deposition in continuous argon-silane plasmas: Effects of silicon nanoparticles on film properties [J].
Cabarrocas, PR ;
Gay, P ;
Hadjadj, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (02) :655-659
[4]   Influence of the reactor design in the case of silicon nitride PECVD [J].
Caquineau, H ;
Despax, B .
CHEMICAL ENGINEERING SCIENCE, 1997, 52 (17) :2901-2914
[5]  
FINGER F, 1992, J APPL PHYS, V71, P5667
[6]   Two-dimensional modelling of SiH4-H2 radio-frequency discharges for a-Si:H deposition [J].
Leroy, O ;
Gousset, G ;
Alves, LL ;
Perrin, J ;
Jolly, J .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1998, 7 (03) :348-358
[7]  
LIEBERMAN MA, 1994, PRINCIPLES PLASMA DI
[8]   Modelling of a large scale reactor for plasma deposition of silicon [J].
Nienhuis, GJ ;
Goedheer, W .
PLASMA SOURCES SCIENCE & TECHNOLOGY, 1999, 8 (02) :295-298
[9]   A self-consistent fluid model for radio-frequency discharges in SiH4-H-2 compared to experiments [J].
Nienhuis, GJ ;
Goedheer, WJ ;
Hamers, EAG ;
vanSark, WGJHM ;
Bezemer, J .
JOURNAL OF APPLIED PHYSICS, 1997, 82 (05) :2060-2071
[10]   Cross-sections, rate constants and transport coefficients in silane plasma chemistry [J].
Perrin, J ;
Leroy, O ;
Bordage, MC .
CONTRIBUTIONS TO PLASMA PHYSICS, 1996, 36 (01) :3-49