Synthesis and characteristics of nanocrystalline Co/N thin film containing CO4N phase

被引：21

作者：

Jia, Hui ^{[1
,2
]}

Wang, Xin ^{[1
]}

Zheng, Weitao ^{[1
]}

Chen, Yan ^{[3
]}

Feng, Shouhua ^{[3
]}

机构：

[1] Jilin Univ, Dept Mat Sci, Key Lab Automobile Mat MOE, Changchun 130012, Peoples R China

[2] Beihua Univ, Sch Phys, Jilin 132021, Peoples R China

[3] Jilin Univ, Coll Chem, State Key Lab Inorgan Synth & Preparat Chem, Changchun 130012, Peoples R China

来源：

MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS | 2008年 / 150卷 / 02期

基金：

中国国家自然科学基金;

关键词：

sputtering; nanocrystalline; CO4N; magnetic properties;

D O I：

10.1016/j.mseb.2008.03.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanocrystalline Co/N thin him containing CO4 N phase has been deposited on Si (1 1 1) substrate by direct current magnetron sputtering in 10% N-2/N-2 + Ar discharge. The composition, structure and magnetic properties were examined by X-ray photoelectron spectroscopy, X-ray diffraction (XRD), transmission electron microscopy (TEM) and Superconducting quantum interference device. XRD and TEM investigations showed that the grain size of nanocrystalline Co-4 N was in the range 10-25 nm (with the error of +/- 0.2 nm). Magnetic analysis indicated that the synthesized Co/N thin films had good in-plane anisotropy. The value of H, with the domination orientation (1 1 1) was about 97 Oe. The saturation magnetization was estimated to be 103.9 +/- 6.1 emu/g, which was larger than the value of 46.5 emu/g firstly reported by Oda et al. (C) 2008 Elsevier B.V. All rights reserved.

引用

页码：121 / 124

页数：4

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