The fabrication of GaN-based optical cavity mirrors by focused ion beam milling

被引：10

作者：

Ren, Q ^{[1
]}

Zhang, B ^{[1
]}

Xu, J ^{[1
]}

Jin, YB ^{[1
]}

Yang, ZJ ^{[1
]}

Hu, XD ^{[1
]}

Qin, ZX ^{[1
]}

Chen, ZZ ^{[1
]}

Ding, XM ^{[1
]}

Tong, YZ ^{[1
]}

Zhang, ZS ^{[1
]}

Zhang, GY ^{[1
]}

Yu, DP ^{[1
]}

Gan, ZZ ^{[1
]}

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

来源：

5TH INTERNATIONAL CONFERENCE ON NITRIDE SEMICONDUCTORS (ICNS-5), PROCEEDINGS | 2003年 / 0卷 / 07期

关键词：

D O I：

10.1002/pssc.200303482

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The study of focused Ga ion beam milling for making GaN-based cavity mirrors is presented. The FIB etching rate of GaN was found to be in the rang of 0.6 mum(3) /nC - 0.43 mum(3)/nC. Three kinds of mirrors including polishing mirror, tilt mirror and nitride/air distributed Bragg reflection (DBR) mirror were fabricated. In particular, by using the transfer matrix method, the dependences of reflectivity and tolerance on the DBR Bragg order combination, number of DBR pair and nitride fill factor were calculated. To take trade-off between high reflectivity and enough tolerance, the combination of 3rd Bragg order of air gap and 5th Bragg order of semiconductor wall and three pairs were chosen. A deeply etched nitide/air DBR with vertical sidewall was obtained by focused Ga ion beam milling. Negative effects of the FIB on the etched GaN-based mirrors were also noticed. (C) 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2300 / 2303

页数：4

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