Stimulated Raman Scattering in Quantum Dots and Nanocomposites Silicon Based Materials

被引：0

作者：

Sirleto, L. ^{[1
]}

Ferrara, M. A. ^{[1
]}

D'Addio, C. ^{[1
]}

Rendina, I. ^{[1
]}

Righini, G. C. ^{[2
]}

机构：

[1] Inst Microelect & Microsyst, Natl Res Council, Via P Castellino 111, I-80131 Naples, Italy

[2] CNR, Istituto Fis Applicata Nello Carrara, I-50019 Sesto Fiorentino, Italy

来源：

2011 13TH INTERNATIONAL CONFERENCE ON TRANSPARENT OPTICAL NETWORKS (ICTON) | 2011年

关键词：

Silicon Quantum Dots; Nonlinear Optics; Stimulated Raman Scattering; Optical Amplifier;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, experimental investigations of stimulated Raman scattering in silicon quantum dots and nanocomposites based Si-materials are reported. Two Raman amplifiers are realized and amplifications due to stimulated Raman scattering are measured. For both of them, a significant enhancement of Raman gain and a significant reduction in threshold power are demonstrated. Our findings indicate that nanostructured materials show great promise for Si-based Raman lasers.

引用

页数：4

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