An XPS study on N doped TiO2 sol-gel thin films

被引：0
|
作者：
Osiceanu, P. [1 ]
Anastasescu, M. [1 ]
Anastasescu, C. [1 ]
Trapalis, Chr. [2 ]
Giannakopoulou, T. [2 ]
Todorova, N. [2 ]
机构：
[1] Ilie Murgulescu Inst Phys Chem, Spl Independentei 202, Bucharest 060021, Romania
[2] NCSR, Inst Mat Sci, Athens 15310, Greece
来源：
CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS | 2007年
关键词：
multilayered N-doped TiO2; sol-gel; XPS; Ti-O-N chemical bonding;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we report on a systematic XPS study on N doped TiO2 sol-gel thin films deposited by sol-gel technique. For this purpose, four kinds of multilayered TiO2 films thermally treated in O-2 and NH3 at 500 and 600 degrees C were deposited on quartz substrate by sol-gel & dipping method. A special attention has been focused on N1s and Ti2p photoelectron lines behaviour as a function of temperature and atmosphere of annealing process in order to investigate the features of the Ti-O-N bonds.
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收藏
页码：353 / +
页数：2
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