Localized plasticity in silicon carbide ceramics induced by laser shock processing

被引:19
作者
Wang, Fei [1 ]
Yan, Xueliang [1 ]
Zhang, Chenfei [2 ]
Deng, Leimin [2 ]
Lu, Yongfeng [2 ]
Nastasi, Michael [1 ,3 ,4 ]
Cui, Bai [1 ,4 ]
机构
[1] Univ Nebraska, Dept Mech & Mat Engn, Lincoln, NE 68588 USA
[2] Univ Nebraska, Dept Elect & Comp Engn, Lincoln, NE 68588 USA
[3] Univ Nebraska, Nebraska Ctr Energy Sci Res, Lincoln, NE 68588 USA
[4] Univ Nebraska, Nebraska Ctr Mat & Nanosci, Lincoln, NE 68588 USA
基金
美国国家科学基金会;
关键词
Silicon carbide; Laser shock processing; Microstructures; Residual stress; Mechanical properties; STRAIN-RATE DEFORMATION; FRACTURE-TOUGHNESS; MICROSTRUCTURAL EVOLUTION; DISLOCATIONS; STRENGTH; WATER; WAVE; IRRADIATION; COMPRESSION; STABILITY;
D O I
10.1016/j.mtla.2019.100265
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper investigates how laser shock processing (LSP) changes the microstructures and mechanical properties of polycrystalline alpha-SiC ceramics. Three-dimensional (3-D) topography suggests that the grain boundaries experience larger height changes and deformation than the grains after LSP. Transmission electron microscopy characterizations revealed dislocation activities near the surface and grain boundaries in LSP-treated SiC ceramics, suggesting that localized plasticity could be generated during the LSP process at room temperature. X-ray diffraction analysis shows that significant compressive residual stress was introduced in SiC surfaces, which could be extended to a depth of 750 mu m below the surface. The LSP-induced localized plasticity can improve the mechanical properties of ceramics, such as the apparent fracture toughness and bending strength.
引用
收藏
页数:8
相关论文
共 71 条
[1]   Strengthening of Si3N4 ceramics by laser peening [J].
Akita, Koichi ;
Sano, Yuji ;
Takahashi, Kazuma ;
Tanaka, Hirotomo ;
Ohya, Shin-ichi .
RESIDUAL STRESSES VII, 2006, 524-525 :141-146
[2]   ELECTRICAL AND OPTICAL-PROPERTIES OF AMORPHOUS SILICON-CARBIDE, SILICON-NITRIDE AND GERMANIUM CARBIDE PREPARED BY GLOW-DISCHARGE TECHNIQUE [J].
ANDERSON, DA ;
SPEAR, WE .
PHILOSOPHICAL MAGAZINE, 1977, 35 (01) :1-16
[3]  
[Anonymous], ADV STRUCTURAL INORG
[4]  
[Anonymous], 1993, SAND921832 SAND NAT
[5]   A CRITICAL-EVALUATION OF INDENTATION TECHNIQUES FOR MEASURING FRACTURE-TOUGHNESS .1. DIRECT CRACK MEASUREMENTS [J].
ANSTIS, GR ;
CHANTIKUL, P ;
LAWN, BR ;
MARSHALL, DB .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (09) :533-538
[6]   Wavelength dependent of laser shock-wave generation in the water-confinement regime [J].
Berthe, L ;
Fabbro, R ;
Peyre, P ;
Bartnicki, E .
JOURNAL OF APPLIED PHYSICS, 1999, 85 (11) :7552-7555
[7]   Delayed failure in shocked silicon carbide [J].
Bourne, N ;
Millett, J ;
Pickup, I .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (09) :6019-6023
[8]   Silicon carbide electronic materials and devices [J].
Capano, MA ;
Trew, RJ .
MRS BULLETIN, 1997, 22 (03) :19-22
[9]   Status of silicon carbide (SiC) as a wide-bandgap semiconductor for high-temperature applications: A review [J].
Casady, JB ;
Johnson, RW .
SOLID-STATE ELECTRONICS, 1996, 39 (10) :1409-1422
[10]   Fracture toughness and subcritical crack growth in polycrystalline silicon [J].
Chasiotis, I. ;
Cho, S. W. ;
Jonnalagadda, K. .
JOURNAL OF APPLIED MECHANICS-TRANSACTIONS OF THE ASME, 2006, 73 (05) :714-722