Electronic structure of the polar ZnO{0001}-surfaces

被引:55
作者
Carlsson, JM [1 ]
机构
[1] Chalmers Univ Technol, Dept Expt Phys, SE-41296 Gothenburg, Sweden
[2] Univ Gothenburg, SE-41296 Gothenburg, Sweden
关键词
D O I
10.1016/S0927-0256(01)00159-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The surface relaxation and the electronic structure of the two polar surfaces of ZnO have been investigated using ab initio supercell calculations. The relaxation of the slab. confined by the two different polar surfaces, compressed the Zn-O double layers, in particular for the (0 0 0 (1) over bar)-surface. where the Zn-O double-layer separation decreased to 48% of the bulk value. The calculated bandstructure revealed an occupied p-surface state on the (000 ($) over bar)-surface, strongly localized to the surface O-atoms. The conduction band on the (0 0 0 I)-surface was split off from the bulk region to form a 2D metallic surface state. This enabled charge transfer from the (0 0 0 (1) over bar)- to the (0 0 0 I)-surface to quench the intrinsic dipole by a similar process that has been observed previously on the unreconstructed MgO(1 I I)-surface. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:24 / 31
页数:8
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