Correlation of PbMoO4 crystal imperfections to Czochralski growth process

被引：38
作者：
Zeng, HC
机构：
[1] Department of Chemical Engineering, Faculty of Engineering, National University of Singapore, Singapore 119260
来源：
JOURNAL OF CRYSTAL GROWTH | 1997年 / 171卷 / 1-2期
关键词：
D O I：
10.1016/S0022-0248(96)00465-4
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
Direct correlation of crystal imperfections in a Czochralski grown PbMoO4 single crystal to growth conditions has been studied using vis-transmission measurement, chemical etching technique and differential thermal analysis (DTA). Two different types of crystal imperfections are identified. It is found that vis-transmission property decreases along the crystal boule length. The density of impurity-related defects in the outer part of the crystals is about 0.65-1.25 times higher than that in the center. A slight off PbMoO4 stoichiometry is observed in surface samples of the upper part crystal due to thermal decomposition. The melting point profile of solidified crucible PbMoO4 is analyzed and its relationship to the observed crystal imperfections is addressed.
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页码：136 / 145
页数：10
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