Band parameters of α-LiBeN semiconductor from density functional calculations

被引:2
|
作者
Ghebouli, B. [2 ]
Ghebouli, M. A. [3 ]
Bouarissa, N. [1 ]
Fatmi, M. [4 ]
机构
[1] King Khalid Univ, Fac Sci, Dept Phys, Abha, Saudi Arabia
[2] Ferhat Abbas Univ, Fac Sci, Dept Phys, Setif 19000, Algeria
[3] Ctr Univ Bordj Bou Arreridj, Dept Phys, El Anasser 34265, Bordj Bou Arrer, Algeria
[4] Ferhat Abbas Univ, Res Unit Emerging Mat, Setif 19000, Algeria
关键词
Ab initio calculations; Quasi-harmonic Debye model; Structural parameters; Electronic and optical properties; Elastic constants; alpha-LiBeN; THERMODYNAMIC PROPERTIES; ELECTRONIC-STRUCTURE; ELASTIC-CONSTANTS; SINGLE-CRYSTAL; HIGH-PRESSURE; AB-INITIO; MGO;
D O I
10.1016/j.spmi.2011.07.010
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
The structural, elastic, electronic, optical and thermal properties of alpha phase in LiBeN semiconductor have been studied using pseudopotential plane wave method based on the density functional theory. The computed lattice parameter agrees well with previous theoretical work. The elastic constants and their pressure dependence are predicted using the static finite strain technique. A set of isotropic elastic parameters and related properties, namely bulk and shear moduli, Young's modulus, Poisson's ratio, average sound velocity and Debye temperature are numerically estimated in the frame work of the Voigt-Reuss-Hill approximation for alpha-LiBeN polycrystalline aggregate. The assignments of the structures in the optical spectra and band structure transitions have been examined and discussed. The thermal effect on heat capacities is investigated by the quasi-harmonic Debye model. To the best of our knowledge, most of the studied properties of the material of interest are reported for the first time. (C) 2011 Elsevier Ltd. All rights reserved.
引用
收藏
页码:319 / 330
页数:12
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