Preparation and microwave dielectric properties of 3ZnO•B2O3 ceramics with low sintering temperature

被引：13

作者：

Hu, Yunxiang ^{[1
]}

Wei, Dongmei ^{[1
]}

Fu, Qiuyun ^{[1
]}

Zhao, Jun ^{[1
]}

Zhou, Dongxiang ^{[1
,2
]}

机构：

[1] Huazhong Univ Sci & Technol, Dept Elect Sci & Technol, Wuhan 430074, Peoples R China

[2] Huazhong Univ Sci & Technol, State Key Lab Mat Proc & Die & Mould Technol, Wuhan 430074, Peoples R China

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2012年 / 32卷 / 03期

关键词：

Sintering; Microstructure-final; Dielectric properties; 3ZnO center dot B2O3; Substrates; CRYSTAL-STRUCTURE; ZINC ORTHOBORATE; SYSTEM; GLASS; MN;

D O I：

10.1016/j.jeurceramsoc.2011.10.013

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The preparation and dielectric properties of 3ZnO center dot B2O3 ceramics were investigated. Dense 3ZnO center dot B2O3 ceramics were obtained as sintered in the temperature range from 950 to 1000 degrees C for 3 h. The X-ray diffraction showed that the obtained ceramics were of a monoclinic 3ZnO center dot B2O3 structure. The ceramic specimens fired at 955 degrees C for 1 h exhibited excellent microwave dielectric properties: epsilon(r) similar to 6.9, Q x f similar to 20,647 GHz (@6.35 GHz), and tau(f) similar to -80 ppm/degrees C. The dependences of relative density, epsilon(r). and Q x f of ceramics sintered at 955 degrees C on sintering soaking time showed that they all reached their plateaus as the soaking time was up to 60 min. Meanwhile, 3ZnO center dot B2O3 ceramics had no reaction with silver during cofiring, indicating it is a potential candidate for low-temperature cofired ceramic (LTCC) substrate. (C) 2011 Elsevier Ltd. All rights reserved.

引用

页码：521 / 524

页数：4

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