Optimization of electronic-band alignments at ferroelectric (ZnxCd1-x)S/Si(100) interfaces

被引：21

作者：

Hotta, Y ^{[1
]}

Rokuta, E ^{[1
]}

Tabata, H ^{[1
]}

Kobayashi, H ^{[1
]}

Kawai, T ^{[1
]}

机构：

[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan

来源：

APPLIED PHYSICS LETTERS | 2001年 / 78卷 / 21期

关键词：

D O I：

10.1063/1.1356724

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have obtained ferroelectric characteristics from nonoxide (ZnxCd1-x)S (x=0.1-0.3) thin films. On the basis of x-ray photoelectron and visible-ultraviolet light absorption spectroscopy measurements, the conduction-band discontinuity at the (ZnxCd1-x)S/Si(100) interfaces is found to vary between 0.4 and 1.3 eV with a change in composition x between 0.1 and 0.9. The leakage current density, which strongly depends on the conduction-band discontinuity, is reduced to less than 10(-6) A/cm(2) at a gate voltage of 4 V. (C) 2001 American Institute of Physics.

引用

页码：3283 / 3285

页数：3