Electrical compensation mechanism in fluorine-doped SnO2

被引：9
|
作者：
Kang, Youngho [1 ]
Van de Walle, Chris G. [1 ]
机构：
[1] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
来源：
APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 15期
基金：
美国国家科学基金会;
关键词：
SPRAYED SNO2;
D O I：
10.1063/1.4999479
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report first-principles results for the electrical compensation mechanism in fluorine-doped SnO2 (SnO2:F), a widely used transparent conductor. We show that interstitial fluorine, which has traditionally been invoked as the source of compensation, has a high formation energy and hence cannot be responsible for compensation. Instead, we attribute compensation to complexes involving two fluorine atoms sharing an oxygen site. Formation of these complexes can explain the puzzling reduction (rather than a simple saturation) in the carrier concentration observed at high F concentrations. Published by AIP Publishing.
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页数：4
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