Temperature stability of dielectric properties for xBiAlO3-(1-x)BaTiO3 ceramics

被引:54
作者
Liu, Mengying [1 ]
Hao, Hua [1 ]
Zhen, Yichao [1 ]
Wang, Ting [1 ]
Zhou, Dongdong [1 ]
Liu, Hanxing [1 ]
Cao, Minghe [1 ]
Yao, Zhonghua [1 ]
机构
[1] Wuhan Univ Technol, Sch Mat Sci & Engn, State Key Lab Adv Technol Mat Synth & Proc, Wuhan 430070, Peoples R China
关键词
Temperature stability; Sol-gel method; Dielectric properties; RELATIVE PERMITTIVITY; RELAXOR BEHAVIOR; DEGREES-C; BATIO3; MICROSTRUCTURE;
D O I
10.1016/j.jeurceramsoc.2015.02.015
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
xBiAlO(3)-(1 - x)BaTiO3 [xBA-(1 - x)BT] polycrystalline ceramics were prepared by solid-state reaction method and sol gel method, respectively. The ceramics were in tetragonal phase when x <= 0.1, transformed to pseudocubic at x>0.1. The temperature stability of the dielectric constant for BA-BT was improved with BA contents increasing. Of particular interest was that the ceramics prepared by sol-gel method had less secondary phase, exhibiting much improved dielectric behavior. Among them, 0.3BA-0.7BT met the requirement of capacitance variation (Delta C/C <= +/- 15%) in the temperature range of -55 to 440 degrees C with moderate dielectric constant (epsilon = 660) and low dielectric loss (tan delta = 1.2%) at room temperature (1 kHz). Nb-doped 0.2BA-0.8BT ceramics were investigated to improve the dielectric temperature stability at high-temperature end. It is found that all samples with 0.01-0.04 mol Nb addition satisfied the X8R specification. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:2303 / 2311
页数:9
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