Cu2-xGeS3: a new hole transporting material for stable and efficient perovskite solar cells

被引:21
作者
Jin, Xin [1 ]
Lei, Xunyong [2 ]
Wu, Chunyan [1 ]
Jiang, Guoshun [1 ]
Liu, Weifeng [1 ]
Zeng, Hualing [2 ]
Chen, Tao [1 ]
Zhu, Changfei [1 ]
机构
[1] Univ Sci & Technol China, Chinese Acad Sci, Dept Mat Sci & Engn, Key Lab Mat Energy Convers, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China
[2] Univ Sci & Technol China, CAS Key Lab Strongly coupled Quantum Matter Phys, ICQD, Hefei Natl Lab Phys Sci Microscale, 96 Jinzhai Rd, Hefei 230026, Anhui, Peoples R China
基金
中国国家自然科学基金;
关键词
HALIDE PEROVSKITES; STABILITY; CONDUCTIVITY; CU2ZNSNS4; LIGHT; LAYER; OXIDE;
D O I
10.1039/c7ta06088b
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Cu2-xGeS3 is a kind of inorganic semiconducting compound with earth abundant elemental storage, excellent chemical stability and environmentally friendly characteristics. It has been used as a light absorption material in traditional p-n junction thin film solar cells. This research presents that Cu2-xGeS3 can also serve as a highly efficient hole transporting material for perovskite solar cells with enhanced stability. The results show that perovskite solar cells based on the Cu2-xGeS3 film can retain 95% power conversion efficiency when exposed to 50% relative humidity for 30 days in air under room lamp light irradiation, while the device using spiro-OMeTAD as the hole transporting material degrades considerably in 2 days and nearly completely degrades in 10 days. Mechanistic investigation shows that the inherent stability and hydrophobic nature of the Cu2-xGeS3 film contribute to the enhanced moisture stability. This investigation provides a material choice for high-efficiency perovskite solar cells with enhanced moisture stability.
引用
收藏
页码:19884 / 19891
页数:8
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