Simulated superior performances of semiconductor superjunction devices

Performances of majority- and minority-carrier semiconductor superjunction devices are examined and compared to that of standard devices in terms of forward current density, reverse leakage current, and switching charge. Based on two-dimensional simulations and theoretical calculations, it is shown that two orders of magnitude improvement in forward current density, an order of magnitude improvement in switching charge for majority-carrier superjunction devices, and an order of magnitude improvement in forward current density for minority-carrier superjunction devices are feasible when compared to standard devices.