A novel interpretation of transistor S-parameters by poles and zeros for RF IC circuit design

被引：38

作者：

Lu, SS ^{[1
]}

Meng, CC

Chen, TW

Chen, HC

机构：

[1] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

[2] Natl Chung Hsing Univ, Dept Elect Engn, Taichung 40227, Taiwan

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 2001年 / 49卷 / 02期

关键词：

poles; S-parameters; transistors; zeros;

D O I：

10.1109/22.903109

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, we have developed an interpretation of transistor S-parameters by poles and zeros. The results from our proposed method agreed well with experimental data from GaAs FETs and Si MOSFET's. The concept of source-series feedback was employed to analyze a transistor circuit set up for the measurement of the S-parameters. Our method can describe the frequency responses of all transistor S-parameters very easily and the calculated S-parameters are scalable with device sizes. It was also found that the long-puzzled kink phenomenon of S-22 observed in a Smith chart can be explained by the poles and zeros of S-22.

引用

页码：406 / 409

页数：4