A Ka-Band Low Noise Amplifier Using Forward Combining Technique

被引：36

作者：

Yu, Yueh-Hua ^{[1
,2
]}

Hsu, Wei-Hong ^{[1
,2
]}

Chen, Yi-Jan Emery ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Elect Engn, Grad Inst Commun Engn, Taipei 10617, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 10617, Taiwan

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2010年 / 20卷 / 12期

关键词：

Feed forward; Ka band; low noise amplifier (LNA); pHEMT; wideband;

D O I：

10.1109/LMWC.2010.2085425

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter presents a wideband low noise amplifier (LNA) implemented in 0.15 mu m InGaAs pHEMT technology. The forward combining technique is proposed to boost the amplifier gain at Ka band. Through gain enhancement, the noise characteristic of the amplifier can also be reduced. The Ka-band LNA exhibits a very wide 3 dB bandwidth from 29 to 44 GHz with the power gain of 14.2 dB. The measured noise figure varies between 2.0 and 3.3 dB from 26.5 to 40 GHz. The supply voltage of the circuit is 1.2 V and the power consumption is 38 mW. The overall chip size is 650 mu m x 720 mu m.

引用

页码：672 / 674

页数：3

共 8 条

[1] 26-42 GHz SOICMOS low noise amplifier [J].

Ellinger, F .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2004, 39 (03) :522-528

[2] An ultra-low power InAs/AlSb HEMT Ka-band low-noise amplifier [J].

Hacker, JB ;

Bergman, J ;

Nagy, G ;

Sullivan, G ;

Kadow, C ;

Lin, HK ;

Gossard, AC ;

Rodwell, M ;

Brar, B .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2004, 14 (04) :156-158

[3] A highly integrated multi-functional chip set for low cost Ka-band transceiver [J].

Ingram, DL ;

Sjogren, L ;

Kraus, J ;

Nishimoto, M ;

Siddiqui, M ;

Sing, S ;

Cha, K ;

Huang, M ;

Lai, R .

1998 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, 1998, :227-230

[4]

LIEN CH, 2000, P AS PAC MICR C DEC, P1171

[5] 90 nm CMOS MMIC amplifier [J].

Masud, MA ;

Zirath, H ;

Ferndahl, M ;

Vickes, HO .

2004 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS, 2004, :201-204

[6]

NELSON B, 1990, IEEE GAAS IC SYM NOV, P165

[7] Millimeter-wave CMOS circuit design [J].

Shigematsu, H ;

Hirose, T ;

Brewer, F ;

Rodwell, M .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2005, 53 (02) :472-477

[8]

Shin SC, 2005, IEEE RAD FREQ INTEGR, P47

← 1 →