Pulse-Programming Instabilities of Unipolar-Type NiOx

被引：24

作者：

Kim, Deok-Kee ^{[1
]}

Suh, Dong-Seok ^{[1
]}

Park, Jucheol ^{[1
]}

机构：

[1] Samsung Elect Co Ltd, Yongin 446711, South Korea

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 06期

关键词：

NiOx; pulse programming; resistive random access memory (ReRAM);

D O I：

10.1109/LED.2010.2045873

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Oscillations in the transient current profiles of NiOx resistive switching memory during set and reset pulse programming were observed and explained by the repeated threshold switching (instantaneous set/reset programming) due to the un-stably applied voltage on the resistive random access memory cell during switching. Adding a feedback circuit to prevent the observed oscillations as well as limiting the parasitic capacitance are needed for stable unipolar resistive memory switching.

引用

页码：600 / 602

页数：3

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