Backward rectifying and forward Schottky behavior at Au/Nb-1.0 wt %-doped SrTiO3 interface

The Au/Nb-1.0 wt %-doped SrTiO3 junctions were successfully fabricated by magnetic controlled sputtering and annealing process. Backward diodelike behaviors were observed in as-prepared junction and the one annealed at 350 degrees C. Transition to Schottky behavior was found in the junction annealed at 750 degrees C; the Schottky junction shows linear capacitance-voltage (C-2-V) relationship in the reverse condition with barrier heights determined to be 1.6 eV. The results of current-voltage (I-V) measurements reveal that high temperature annealing can alter interface barrier and thereby ameliorate the stability of leakage current remarkably. (c) 2007 American Institute of Physics.