Backward rectifying and forward Schottky behavior at Au/Nb-1.0 wt %-doped SrTiO3 interface

被引：20

作者：

Cui, Yimin ^{[1
]}

Wang, Rongming ^{[1
]}

机构：

[1] Beijing Univ Aeronaut & Astronaut, Sch Sci, Beijing 100083, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2007年 / 91卷 / 23期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2823583

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The Au/Nb-1.0 wt %-doped SrTiO3 junctions were successfully fabricated by magnetic controlled sputtering and annealing process. Backward diodelike behaviors were observed in as-prepared junction and the one annealed at 350 degrees C. Transition to Schottky behavior was found in the junction annealed at 750 degrees C; the Schottky junction shows linear capacitance-voltage (C-2-V) relationship in the reverse condition with barrier heights determined to be 1.6 eV. The results of current-voltage (I-V) measurements reveal that high temperature annealing can alter interface barrier and thereby ameliorate the stability of leakage current remarkably. (c) 2007 American Institute of Physics.

引用

页数：3

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