Growth and characterization of indium oxide films

被引：70

作者：

Prathap, P.

Devi, G. Gowri

Subbaiah, Y. P. V.

Reddy, K. T. Ramakrishna ^{[1
]}

Ganesan, V.

机构：

[1] Sri Venkateswara Univ, Dept Phys, Thin Film Lab, Tirupati 517502, Andhra Pradesh, India

[2] Sungkyunkwan Univ, Sch Informat & Commun Engn, Suwon, South Korea

[3] UGC, DAE, Consortium Sci Res, Indore, India

来源：

CURRENT APPLIED PHYSICS | 2008年 / 8卷 / 02期

关键词：

In2O3; films; spray pyrolysis; physical properties;

D O I：

10.1016/j.cap.2007.06.001

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

ln(2)O(3) films have been deposited using chemical spray pyrolysis technique at different substrate temperatures that varied in the range, 250-450 degrees C. The structural and morphological properties of the as-deposited films were studied using X-ray diffractometer and scanning electron microscope as well as atomic force microscope, respectively. The films formed at a temperature of 400 degrees C showed body-centered cubic structure with a strong (222) orientation. The structural parameters such as the crystallite size, lattice strain and texture coefficient of the films were also calculated. The films deposited at a temperature of 400 degrees C showed an optical transmittance of >85% in the visible region. The change of resistivity, mobility, carrier concentration and activation energies with the deposition temperature was studied. The highest figure of merit for the layers grown at 400 degrees C was 1.09 x 10(-3) Omega(-1). (C) 2007 Elsevier B.V. All rights reserved.

引用

页码：120 / 127

页数：8

共 44 条

[1] Real-time in situ crystallization and electrical properties of pulsed laser deposited indium oxide thin films [J].