On the Physical Mechanism of Transient Negative Capacitance Effect in Deep Subthreshold Region

被引:27
作者
Jin, Chengji [1 ]
Saraya, Takuya [1 ]
Hiramoto, Toshiro [1 ]
Kobayashi, Masaharu [1 ]
机构
[1] Univ Tokyo, Inst Ind Sci, Tokyo 1538505, Japan
关键词
Steep subthreshold slope (SS); ferroelectric; negative capacitance (NC); VOLTAGE; CHARGE;
D O I
10.1109/JEDS.2019.2899727
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have investigated the physical mechanism of steep subthreshold slope (SS) in ferroelectric FET (FeFET) based on a dynamic ferroelectric (FE) model without traversing the negative capacitance (NC) region of the S-shaped polarization-voltage predicted by Landau theory. The dynamic FE model is applied to an FE-dielectric (FE-DE) series capacitor as well as FeFET after calibration and verification by transient measurement of an FE-HfO2 capacitor. By investigating current through the FE-DE series capacitor and the gate capacitor of FeFET, we find that incomplete screening of spontaneous polarization charge results in transient NC and sub-60 mV/dec SS. Also, it should be noted that, for FeFET, small depletion layer capacitance has an important role to cause strong depolarization effect and thus steep SS. Moreover, reverse drain induced barrier lowering happens even with this FE model. The model presented in this paper provides a reasonable interpretation for the previously reported steep SS of NC FETs.
引用
收藏
页码:368 / 374
页数:7
相关论文
共 37 条
[31]  
Sharma P, 2017, S VLSI TECH, pT154, DOI 10.23919/VLSIT.2017.7998160
[32]   Time-Resolved Measurement of Negative Capacitance [J].
Sharma, Pankaj ;
Zhang, Jianchi ;
Ni, Kai ;
Datta, Suman .
IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) :272-275
[33]   Steep-slope hysteresis-free negative capacitance MoS2 transistors [J].
Si, Mengwei ;
Su, Chun-Jung ;
Jiang, Chunsheng ;
Conrad, Nathan J. ;
Zhou, Hong ;
Maize, Kerry D. ;
Qiu, Gang ;
Wu, Chien-Ting ;
Shakouri, Ali ;
Alam, Muhammad A. ;
Ye, Peide D. .
NATURE NANOTECHNOLOGY, 2018, 13 (01) :24-+
[34]   Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors [J].
Song, Seul Ji ;
Kim, Yu Jin ;
Park, Min Hyuk ;
Lee, Young Hwan ;
Kim, Han Joon ;
Moon, Taehwan ;
Do Kim, Keum ;
Choi, Jung-Hae ;
Chen, Zhihui ;
Jiang, Anquan ;
Hwang, Cheol Seong .
SCIENTIFIC REPORTS, 2016, 6
[35]   Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories [J].
Yurchuk, Ekaterina ;
Mueller, Johannes ;
Mueller, Stefan ;
Paul, Jan ;
Pesic, Milan ;
van Bentum, Ralf ;
Schroeder, Uwe ;
Mikolajick, Thomas .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) :3501-3507
[36]   Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade Subthreshold Swing, Negligible Hysteresis, and Improved IDS [J].
Zhou, Jiuren ;
Han, Genquan ;
Li, Qinglong ;
Peng, Yue ;
Lu, Xiaoli ;
Zhang, Chunfu ;
Zhang, Jincheng ;
Sun, Qing-Qing ;
Zhang, David Wei ;
Hao, Yue .
2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,
[37]   Negative capacitance in multidomain ferroelectric superlattices [J].
Zubko, Pavlo ;
Wojdel, Jacek C. ;
Hadjimichael, Marios ;
Fernandez-Pena, Stephanie ;
Sene, Anais ;
Luk'yanchuk, Igor ;
Triscone, Jean-Marc ;
Iniguez, Jorge .
NATURE, 2016, 534 (7608) :524-+