共 37 条
- [31] Sharma P, 2017, S VLSI TECH, pT154, DOI 10.23919/VLSIT.2017.7998160
- [32] Time-Resolved Measurement of Negative Capacitance[J]. IEEE ELECTRON DEVICE LETTERS, 2018, 39 (02) : 272 - 275Sharma, Pankaj论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USAZhang, Jianchi论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USANi, Kai论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USADatta, Suman论文数: 0 引用数: 0 h-index: 0机构: Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46556 USA
- [33] Steep-slope hysteresis-free negative capacitance MoS2 transistors[J]. NATURE NANOTECHNOLOGY, 2018, 13 (01) : 24 - +Si, Mengwei论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USASu, Chun-Jung论文数: 0 引用数: 0 h-index: 0机构: Natl Nano Device Labs, Hsinchu 300, Taiwan Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAJiang, Chunsheng论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Tsinghua Univ, Inst Microelect, Tsinghua Natl Lab Informat Sci & Technol, Beijing 100084, Peoples R China Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAConrad, Nathan J.论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAZhou, Hong论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAMaize, Kerry D.论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAQiu, Gang论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAWu, Chien-Ting论文数: 0 引用数: 0 h-index: 0机构: Natl Nano Device Labs, Hsinchu 300, Taiwan Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAShakouri, Ali论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAAlam, Muhammad A.论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USAYe, Peide D.论文数: 0 引用数: 0 h-index: 0机构: Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
- [34] Alternative interpretations for decreasing voltage with increasing charge in ferroelectric capacitors[J]. SCIENTIFIC REPORTS, 2016, 6Song, Seul Ji论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Yu Jin论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaPark, Min Hyuk论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaLee, Young Hwan论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaKim, Han Joon论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaMoon, Taehwan论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaDo Kim, Keum论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaChoi, Jung-Hae论文数: 0 引用数: 0 h-index: 0机构: Korea Inst Sci & Technol, Elect Mat Res Ctr, Seoul 136791, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaChen, Zhihui论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaJiang, Anquan论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South KoreaHwang, Cheol Seong论文数: 0 引用数: 0 h-index: 0机构: Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea Seoul Natl Univ, Inter Univ Semicond Res Ctr, Seoul 151744, South Korea Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea
- [35] Charge-Trapping Phenomena in HfO2-Based FeFET-Type Nonvolatile Memories[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2016, 63 (09) : 3501 - 3507Yurchuk, Ekaterina论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany Anvosyst Dresden GmbH, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMueller, Johannes论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer Inst Photon Microsyst, Ctr Nanoelect Technol, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMueller, Stefan论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyPaul, Jan论文数: 0 引用数: 0 h-index: 0机构: Fraunhofer Inst Photon Microsyst, Ctr Nanoelect Technol, D-01099 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyPesic, Milan论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, Germanyvan Bentum, Ralf论文数: 0 引用数: 0 h-index: 0机构: GlobalFoundries Dresden Module One LLC & Co KG, D-01109 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanySchroeder, Uwe论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, GermanyMikolajick, Thomas论文数: 0 引用数: 0 h-index: 0机构: NaMLab gGmbH, D-01187 Dresden, Germany Tech Univ Dresden, Inst Semicond & Microsyst, D-01187 Dresden, Germany NaMLab gGmbH, D-01187 Dresden, Germany
- [36] Ferroelectric HfZrOx Ge and GeSn PMOSFETs with Sub-60 mV/decade Subthreshold Swing, Negligible Hysteresis, and Improved IDS[J]. 2016 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM), 2016,Zhou, Jiuren论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaHan, Genquan论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaLi, Qinglong论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaPeng, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaLu, Xiaoli论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaZhang, Chunfu论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaZhang, Jincheng论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaSun, Qing-Qing论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaZhang, David Wei论文数: 0 引用数: 0 h-index: 0机构: Fudan Univ, Sch Microelect, State Key Lab ASIC & Syst, Shanghai 200433, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R ChinaHao, Yue论文数: 0 引用数: 0 h-index: 0机构: Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China Xidian Univ, Sch Microelect, State Key Discipline Lab Wide Band Gap Semicond, Xian 710071, Shaanxi, Peoples R China
- [37] Negative capacitance in multidomain ferroelectric superlattices[J]. NATURE, 2016, 534 (7608) : 524 - +Zubko, Pavlo论文数: 0 引用数: 0 h-index: 0机构: UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, England UCL, Dept Phys & Astron, 17-19 Gordon St, London WC1H 0HA, England UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandWojdel, Jacek C.论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandHadjimichael, Marios论文数: 0 引用数: 0 h-index: 0机构: UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, England UCL, Dept Phys & Astron, 17-19 Gordon St, London WC1H 0HA, England UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandFernandez-Pena, Stephanie论文数: 0 引用数: 0 h-index: 0机构: Univ Geneva, Dept Quantum Matter Phys, CH-1211 Geneva, Switzerland UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandSene, Anais论文数: 0 引用数: 0 h-index: 0机构: Univ Picardie, Lab Condensed Matter Phys, F-80000 Amiens, France UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandLuk'yanchuk, Igor论文数: 0 引用数: 0 h-index: 0机构: Univ Picardie, Lab Condensed Matter Phys, F-80000 Amiens, France LD Landau Theoret Phys Inst, Moscow, Russia UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandTriscone, Jean-Marc论文数: 0 引用数: 0 h-index: 0机构: Univ Geneva, Dept Quantum Matter Phys, CH-1211 Geneva, Switzerland UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, EnglandIniguez, Jorge论文数: 0 引用数: 0 h-index: 0机构: Inst Ciencia Mat Barcelona ICMAB CSIC, Campus UAB, Bellaterra 08193, Spain LIST, Mat Res & Technol Dept, 5 Ave Hauts Fourneaux, L-4362 Esch Sur Alzette, Luxembourg UCL, London Ctr Nanotechnol, 17-19 Gordon St, London WC1H 0HA, England