Growth and thermal stability of pseudomorphic Ge1-yCy/Ge superlattices on Ge(001)

被引:13
作者
Duschl, R
Schmidt, OG
Winter, W
Eberl, K
Dashiell, MW
Kolodzey, J
Jin-Phillipp, NY
Phillipp, F
机构
[1] Max Planck Inst Festkorperforsch, D-70569 Stuttgart, Germany
[2] Univ Delaware, Dept Elect & Comp Engn, Newark, DE 19716 USA
[3] Max Planck Inst Met Forsch, D-70569 Stuttgart, Germany
关键词
D O I
10.1063/1.123470
中图分类号
O59 [应用物理学];
学科分类号
摘要
High quality Ge/Ge1-yCy superlattices with nominal carbon contents of 1.2% and 2.1% were grown by molecular beam epitaxy on Ge(001). In transmission electron microscopy the layers are planar and perfectly pseudomorphic without any extended defects observable. The infrared absorption line at 529 cm(-1) is attributed to the local vibrational mode of substitutional carbon in germanium. However, in contrast to Si1-yCy alloys where almost 100% of the C is substitutional under optimized growth conditions, x-ray diffraction measurements indicate that the efficiency of carbon incorporation onto substitutional sites is only about 30% for low temperature growth at T-S = 200 degrees C. It reduces further for higher growth temperatures to only about 10% at T-S = 300 degrees C. Post-growth annealing experiments indicate thermal stability up to 450 degrees C. Annealing at higher temperature results in a reduction of substitutional carbon content. As in the case of Si1-yCy alloys the built-in strain is relaxed by C diffusion and not by nucleation of misfit dislocation. (C) 1999 American Institute of Physics. [S0003-6951(99)02108-7].
引用
收藏
页码:1150 / 1152
页数:3
相关论文
共 16 条
[1]  
BORG RJ, 1992, PHYSICAL CHEM SOLIDS, P521
[2]   Growth and characterization of Ge1-yCy/Si superlattice structures on Si substrates [J].
Brunner, K ;
Eberl, K ;
Winter, W ;
Bugiel, E .
APPLIED SURFACE SCIENCE, 1996, 102 :17-21
[3]  
EBERL K, 1997, FESTKORPERPROBLEME, V37, P25
[4]  
EBERL K, 1998, GERMANIUM SILICON SC
[5]   INVESTIGATION OF THE HIGH-TEMPERATURE BEHAVIOR OF STRAINED SI1-YCY/SI HETEROSTRUCTURES [J].
FISCHER, GG ;
ZAUMSEIL, P ;
BUGIEL, E ;
OSTEN, HJ .
JOURNAL OF APPLIED PHYSICS, 1995, 77 (05) :1934-1937
[6]   Substitutional carbon in germanium [J].
Hoffmann, L ;
Bach, JC ;
Nielsen, BB ;
Leary, P ;
Jones, R ;
Oberg, S .
PHYSICAL REVIEW B, 1997, 55 (17) :11167-11173
[7]   Short-range order, bulk moduli, and physical trends in c-Si1-xCx alloys [J].
Kelires, PC .
PHYSICAL REVIEW B, 1997, 55 (14) :8784-8787
[8]   GROWTH OF GERMANIUM-CARBON ALLOYS ON SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY [J].
KOLODZEY, J ;
ONEIL, PA ;
ZHANG, S ;
ORNER, BA ;
ROE, K ;
UNRUH, KM ;
SWANN, CP ;
WAITE, MM ;
SHAH, SI .
APPLIED PHYSICS LETTERS, 1995, 67 (13) :1865-1867
[9]   The effect of composition on the thermal stability of Si1-x-yGexCy/Si heterostructures [J].
Kulik, LV ;
Hits, DA ;
Dashiell, MW ;
Kolodzey, J .
APPLIED PHYSICS LETTERS, 1998, 72 (16) :1972-1974
[10]  
Newman R. C., 1985, MATERIAL RES SOC S P, V59, P403