Improvement of light extraction from GaN-based thin-film light-emitting diodes by patterning undoped GaN using modified laser lift-off

被引：28

作者：

Bao, Kui ^{[1
,2
]}

Kang, Xiang Ning ^{[1
,2
]}

Zhang, Bei ^{[1
,2
]}

Dai, Tao ^{[1
,2
]}

Sun, Yong Jian ^{[1
,2
]}

Fu, Qiang ^{[1
,2
]}

Lian, Gui Jun ^{[1
,2
]}

Xiong, Guang Cheng ^{[1
,2
]}

Zhang, Guo Yi ^{[3
]}

Chen, Yong ^{[3
]}

机构：

[1] Peking Univ, Sch Phys, Beijing 100871, Peoples R China

[2] State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China

[3] Lab Photon & Naostruct, Route Nozay, F-91460 Marcoussis, France

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 14期

基金：

中国国家自然科学基金; 国家高技术研究发展计划(863计划);

关键词：

D O I：

10.1063/1.2906632

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

To improve light extraction from GaN-based light-emitting diodes (LEDs), we demonstrated an approach of modified laser lift-off (M-LLO) technique for patterning undoped GaN (u-GaN). The M-LLO consists in sequentially forming a two-dimensional triangular lattice pattern with a 4 mu m period on a polymer layer over a sapphire substrate backplane by UV imprint and delivering the pattern onto u-GaN accompanied with the removal of the sapphire substrate. The enhancement of light extraction from GaN-based M-LLO LED with a reflective Ag film on the 120 nm deep u-GaN pattern was about 31% and 100% compared to that of a LLO-LED with a reflective film and a conventional LED with a sapphire substrate, respectively. (C) 2008 American Institute of Physics.

引用

页数：3

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