Selective growth of graphene in layer-by-layer via chemical vapor deposition

被引:9
作者
Park, Jaehyun [1 ,2 ,5 ]
An, Hyosub [1 ,2 ,6 ]
Choi, Dong-Chul [1 ,2 ]
Hussain, Sajjad [1 ,2 ]
Song, Wooseok [3 ]
An, Ki-Seok [3 ]
Lee, Won-Jun [2 ]
Lee, Naesung [2 ]
Lee, Wan-Gyu [4 ]
Jung, Jongwan [1 ,2 ]
机构
[1] Sejong Univ, Graphene Res Inst, Seoul 143747, South Korea
[2] Sejong Univ, Fac Nanotechnol & Adv Mat Engn, Seoul 143747, South Korea
[3] Korea Res Inst Chem Technol, Thin Film Mat Res Ctr, Daejeon 305600, South Korea
[4] Natl NanoFab Ctr, Dept Nanodevice, Daejeon 305600, South Korea
[5] Samsung Elect, Kyunggi Do, South Korea
[6] SIMMTECH, Cheongju, South Korea
基金
新加坡国家研究基金会;
关键词
LARGE-AREA; RAMAN-SPECTROSCOPY; GRAPHITE FILMS; HIGH-QUALITY; SINGLE; CARBON; TRANSPARENT; SOLUBILITY; COPPER;
D O I
10.1039/c6nr04306b
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Selective and precise control of the layer number of graphene remains a critical issue for the practical applications of graphene. First, it is highly challenging to grow a continuous and uniform few-layer graphene since once the monolayer graphene fully covers a copper (Cu) surface, the growth of the second layer stops, resulting in mostly nonhomogeneous films. Second, from the selective adlayer growth point of view, there is no clear pathway for achieving this. We have developed the selective growth of a graphene adlayer in layer-by-layer via chemical vapor deposition (CVD) which makes it possible to stack graphene on a specific position. The key idea is to deposit a thin Cu layer (similar to 40 nm thick) on pre-grown monolayer graphene and to apply additional growth. The thin Cu atop the graphene/Cu substrate acts as a catalyst to decompose methane (CH4) gas during the additional growth. The adlayer is grown selectively on the pre-grown graphene, and the thin Cu is removed through evaporation during CVD, eventually forming large-area and uniform double layer graphene. With this technology, highly uniform graphene films with precise thicknesses of 1 to 5 layers and graphene check patterns with 1 to 3 layers were successfully demonstrated. This method provides precise LBL growth for a uniform graphene film and a technique for the design of new graphene devices.
引用
收藏
页码:14633 / 14642
页数:10
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