Low threshold current InGaAs vertical cavity surface emitting laser with reverse mesa structure

被引：0
|
作者：
Pan, Z [1 ]
Huang, YZ [1 ]
Wu, RH [1 ]
Zhou, ZQ [1 ]
Ling, YW [1 ]
Wang, QM [1 ]
机构：
[1] CHINESE ACAD SCI,INST SEMICOND,BEIJING 100083,PEOPLES R CHINA
来源：
SEMICONDUCTOR LASERS II | 1996年 / 2886卷
关键词：
VCSEL; low threshold current; reverse mesa structure; in situ technology;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：15 / 18
页数：4
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