Preparation and properties of GeS2 single crystals

被引：9
作者：
Golubkov, AV [1 ]
Dubrovskii, GB [1 ]
Shelykh, AI [1 ]
机构：
[1] Russian Acad Sci, AF Ioffe Physicotech Inst, St Petersburg 194021, Russia
来源：
SEMICONDUCTORS | 1998年 / 32卷 / 07期
基金：
俄罗斯基础研究基金会;
关键词：
Reflection; Crystallization; Magnetic Material; Chemical Vapor; Transmission Spectrum;
D O I：
10.1134/1.1187494
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a = 11.45 Angstrom, b = 16.09 Angstrom, c = 6.7 Angstrom, and beta = 91 degrees. The reflection and transmission spectra are measured in the region of the absorption edge. The gap width is found to be equal to 3.2 eV. (C) 1998 American Institute of Physics.
引用
收藏
页码：734 / 735
页数：2
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