Short-period strain-balanced GaAs1-xNx/InAs(N) superlattices lattice-matched to Inp(001):: a new material for 0.4-0.6 eV mid IR applications

A theoretical and experimental investigation of electronic band structure (F-point) of strain balanced GaAs1-xNx/InAs1-xNx short period superlattice on InP is performed. A six-band Kane Hamiltonian and band anti-crossing models, modified for the strain effects are used to describe the electronic states of the highly strained zincblende GaAs1-xNx and InAs1-xNx ternaries. Operating wavelengths of these heterostructures are predicted to extend beyond 2 mu m. Preliminary photoluminescence results of the chemical beam epitaxially grown sample are shown to be consistent with the theoretical predictions.