Very low voltage single drive domain inverted LiNbO3 integrated electro-optic modulator

被引:42
|
作者
Lucchi, F.
Janner, D. [1 ]
Belmonte, M.
Balsamo, S.
Villa, M.
Giurgola, S.
Vergani, P.
Pruneri, V.
机构
[1] ICFO, Barcelona 08860, Spain
[2] Avanex Corp Sede Secondaria, R&D, I-20097 San Donato Milanese, MI, Italy
[3] ICREA, Barcelona 08010, Spain
关键词
D O I
10.1364/OE.15.010739
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Domain inversion is used in a simple fashion to improve significantly the performance of a waveguide electro-optic modulator in z-cut LiNbO3. The waveguide arms of the Mach-Zehnder interferometer are placed in opposite domain-oriented regions under the same, narrower and more efficient electrode, so that opposite phase shifts (push-pull effect) can still be achieved despite the arms being subjected to the same electric field. Switching voltages close to 2 V are obtained, which allow 10Gb/s modulation with inexpensive drivers, such as those used for electro-absorption modulators, which deliver driving voltages well below 3V. (c) 2007 Optical Society of America
引用
收藏
页码:10739 / 10743
页数:5
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