Atomic layer deposition of functional multicomponent oxides

被引:54
作者
Coll, Mariona [1 ]
Napari, Mari [2 ,3 ]
机构
[1] CSIC, Inst Ciencia Mat Barcelona ICMAB, Campus UAB, Bellaterra 08193, Spain
[2] Univ Cambridge, Dept Mat Sci & Met, 27 Charles Babbage Rd, Cambridge CB3 0FS, England
[3] Univ Southampton, Zepler Inst Photon & Nanoelect, Elect Mat & Devices Res Grp, Southampton SO17 1BJ, Hants, England
基金
英国工程与自然科学研究理事会;
关键词
DOPED ZNO FILMS; TITANATE THIN-FILMS; ROOM-TEMPERATURE FERROMAGNETISM; TRANSPARENT CONDUCTIVE OXIDE; ELECTRICAL-PROPERTIES; EPITAXIAL-GROWTH; MAGNETIC-PROPERTIES; METAL ALKOXIDES; ALD; PRECURSORS;
D O I
10.1063/1.5113656
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Advances in the fabrication of multicomponent oxide thin films are crucial to prepare specific compositions with precise structures and controlled interfaces. This will enable the investigation of novel phenomena and development of new devices and applications. Atomic layer deposition (ALD) has flourished over the last decades in fabrication of conformal thin films and nanostructures with atomic-scale control. Nonetheless, the scenario of deposition of complex oxides with desired properties has proven to be challenging. In this article, we scrutinize the basics of the precursor and process design for ALD followed by a review on the major achievements in the synthesis of doped and complex oxides identifying several relevant examples that are foreseen to have direct technological applications. Finally, current challenges and perspectives on ALD complex oxides are given. (C) 2019 Author(s).
引用
收藏
页数:15
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