Effect of Primary Knocked-on Atoms on Conductivity Compensation in N-type 4H-SiC Irradiated by 1 MeV Electrons, 25 MeV C Ions and 40 MeV Si Ions

被引：0

作者：

Ma, Guoliang ^{[1
]}

Zhang, Yanqing ^{[1
]}

Li, Heyi ^{[2
]}

Liu, Chaoming ^{[2
]}

Qi, Chunhua ^{[1
]}

Wei, Yidan ^{[2
]}

Wang, Tianqi ^{[1
]}

Dong, Shangli ^{[2
]}

Huo, Mingxue ^{[1
]}

机构：

[1] Harbin Inst Technol, Res Ctr Basic Space Sci, Harbin 150001, Peoples R China

[2] Harbin Inst Technol, Sch Mat Sci & Engn, Harbin 150001, Peoples R China

来源：

2019 IEEE 26TH INTERNATIONAL SYMPOSIUM ON PHYSICAL AND FAILURE ANALYSIS OF INTEGRATED CIRCUITS (IPFA) | 2019年

基金：

中国国家自然科学基金;

关键词：

4H-SiC; conductivity compensation; irradiation defects; PKA; SILICON-CARBIDE; ENERGY; DETECTORS;

D O I：

10.1109/ipfa47161.2019.8984862

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The conductivity recombination mechanism of different ions irradiation was investigated in n-type 4H-SiC Schottky diode. The incident ions were selected as 1 MeV electrons, 25 MeV C and 40 MeV Si ions, respectively. The primary knocked-on atoms (PKAs) distribution in the irradiated 4H-SiC is calculated by SRIM code. After irradiation, the carrier concentration changed significantly. Compared with virous particles irradiation, it is indicated that the carrier removal rates under these three irradiation conditions are greatly different. Based on the theoretical analysis, different conductivity compensation brought by different defect status is the major reason for the significant difference in carrier removal rate.

引用

页数：5

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