Microwave dielectric properties of BiNbO4 ceramics with CuO-V2O5 addition

被引：11

作者：

Lee, Hong Ryul ^{[1
]}

Yoon, Ki Hyun ^{[1
,4
]}

Kim, Eung Soo ^{[2
]}

Choi, Ji Won ^{[3
]}

Boucher, Richard ^{[4
]}

机构：

[1] Yonsei Univ, Sch Adv Mat Engn, Seoul 120749, South Korea

[2] Kyonggi Univ, Dept Mat Engn, Suwon 442769, South Korea

[3] Korea Inst Sci & Technol, Thin Film Mat Res Ctr, Seoul 139650, South Korea

[4] Tech Univ Dresden, Inst Mat Sci, D-01062 Dresden, Germany

来源：

CERAMICS INTERNATIONAL | 2012年 / 38卷

关键词：

Sintering; Dielectric properties; Chemical synthesis; Microstructure; COMPLEX PEROVSKITES;

D O I：

10.1016/j.ceramint.2011.04.078

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

BiNbO4 ceramics were developed by using CuO-V2O5 as a liquid phase sintering agent. The resultant dielectric properties were analyzed in terms of the densification and the amount of CuO-V2O5 sintering agent. The addition of 0.8 wt.% CuO-V2O5 as its sintering agent was observed to perform most satisfactory. At 850 degrees C, uniform and enhanced microstructure was observed for the BiNbO4 specimen with 0.8 wt.% CuO-V2O5 addition. Furthermore, the effect of CuO-V2O5 addition on the microwave dielectric properties of BiNbO4 was also investigated. As the sintering temperature increased to 900 degrees C, the dielectric constant increased but nearly constant and the quality factor (QF) showed a maximum at 850 degrees C and then decreased for all compositions of the 900 degrees C sintered specimens. With an increase in CuO-V2O5 content, the temperature coefficient of frequency (TCF) increased in accordance with the dielectric mixing rule and microstructural behavior. (C) 2011 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

引用

页码：S177 / S181

页数：5

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