Statistical compact modeling of variations in nano MOSFETs

被引:11
作者
Lin, Chung-Hsun [1 ]
Dunga, Mohan V. [1 ]
Lu, Darsen [1 ]
Niknejad, Ali M. [1 ]
Hu, Chenming [1 ]
机构
[1] Univ Calif Berkeley, Dept Elect Engn & Comp Sci, Berkeley, CA 94720 USA
来源
2008 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PROGRAM | 2008年
关键词
D O I
10.1109/VTSA.2008.4530849
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:165 / 166
页数:2
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