The roles of argon addition in the hot filament chemical vapor deposition system

被引：66
作者：
Zhang, YF [1 ]
Zhang, F
Gao, QJ
Peng, XF
Lin, ZD
机构：
[1] Peking Univ, Dept Phys, Beijing 100871, Peoples R China
[2] Beijing Inst Powder Met, Beijing 100078, Peoples R China
来源：
DIAMOND AND RELATED MATERIALS | 2001年 / 10卷 / 08期
关键词：
diamond films; heated filament CVD; nano-crystalline; electron microscopy;
D O I：
10.1016/S0925-9635(01)00383-1
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Nano-crystalline diamond films were successfully deposited using CH4/H-2/Ar gas mixture by hot filament chemical vapor deposition (HFCVD) method. The characterizations of the as-grown films are carried out by using field emission scanning electron microscopy (FE-SEM) and high-resolution transmission electron microscopy (HR-TEM). The results show that the film consists of nano-crystalline diamond grains with sizes ranging from 4 to 30 nm. High renucleation rates are found and attributed to the formation of these nano-diamond grains. The roles that Ar plays in HFCVD system are discussed. (C) 2001 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：1523 / 1527
页数：5
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