Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature

被引：2

作者：

Huang, Q ^{[1
]}

Guo, LW ^{[1
]}

Zhang, MH ^{[1
]}

Zhang, YF ^{[1
]}

Han, YJ ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

point defects; molecular beam epitaxy; photorefractive materials; semiconducting gallium arsenide;

D O I：

10.1016/S0022-0248(01)00644-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the properties of GaAs/AlGaAs multiple quantum wells grown at medium temperature range 300-400 degreesC. The samples exhibit both of sharp exciton absorption and ultrafast carrier lifetime, which are suitable as photorefractive devices. Photoluminescence, absorption spectroscopy, optical transient current spectroscopy and pump-probe technique were used to characterize the materials grown on GaAs (0 0 1) on-axis or miscut substrates. Using a YAG:Nd laser as a pump source, the quenchable characteristics of EL2-like defects were observed in electroabsorption for the first rime. By optimizing growth parameters and device structure, the transient diffraction efficiency approaches 1.2% and 4.5% in non-degeneration four-wave mixing under Frantz-Keldysh and Stark geometry, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：117 / 122

页数：6

共 50 条

[31] Low temperature growth of InGaAs/GaAs strained-layer single quantum wells [J].

Yasutake, K ;

Takeuchi, A ;

Kakiuchi, H ;

Okuyama, Y ;

Yoshii, K ;

Kawabe, H .

INTERNATIONAL JOURNAL OF THE JAPAN SOCIETY FOR PRECISION ENGINEERING, 1997, 31 (01) :47-52

[32] Structural and Photoluminescence Properties of Low-Temperature GaAs Grown on GaAs(100) and GaAs(111)A Substrates [J].

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[33] Defect Creation in InGaAs/GaAs Multiple Quantum Wells - II. Optical Properties [J].

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[34] Localized states emission in type-I GaAsSb/AlGaAs multiple quantum wells grown by molecular beam epitaxy [J].

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[35] PHOTOLUMINESCENCE FROM GAAS/ALGAAS QUANTUM-WELLS GROWN AT 350-DEGREES-C BY CONVENTIONAL MOLECULAR-BEAM EPITAXY [J].

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[36] Impact of elevated GaAs barrier growth temperature on the homogeneity and photoluminescence of GaAsBi multiple quantum wells [J].

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[37] Optical properties of inGaAs/GaAs quantum wells grown by Sb-assisted molecular beam epitaxy [J].

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Ni, HQ ;

Wu, DH ;

Xu, YQ ;

Niu, ZC .

JOURNAL OF CRYSTAL GROWTH, 2006, 288 (01) :12-17

[38] Effects of segregation on the optical properties of (In,Ga)As/GaAs quantum wells grown by MBE under various conditions [J].

Disseix, P ;

Leymarie, J ;

Vasson, A ;

Vasson, AM ;

Monier, C ;

Grandjean, N ;

Leroux, M ;

Massies, J .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :151-154

[39] Optical investigation of In0.21Ga0.79As multiple quantum wells grown on (001) and (113) A GaAs substrates [J].

Fraj, Ibtissem ;

Saidi, Faouzi ;

Zaaboub, Zouhour ;

Bouzaiene, Lotfi ;

Sfaxi, Larbi ;

Maaref, Hassen .

SUPERLATTICES AND MICROSTRUCTURES, 2015, 82 :406-414

[40] Fabrication of self-assembled GaAs/AlGaAs quantum dots by low-temperature droplet epitaxy [J].

Lee, CD ;

Park, C ;

Lee, HJ ;

Lee, KS ;

Park, SJ ;

Park, CG ;

Noh, SK ;

Koguchi, N .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1998, 37 (12B) :7158-7160

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