Properties of deep levels and photorefractive effect in GaAs/AlGaAs multiple quantum wells grown in low temperature

被引：2

作者：

Huang, Q ^{[1
]}

Guo, LW ^{[1
]}

Zhang, MH ^{[1
]}

Zhang, YF ^{[1
]}

Han, YJ ^{[1
]}

Zhou, JM ^{[1
]}

机构：

[1] Chinese Acad Sci, Inst Phys, Beijing 100080, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2001年 / 227卷

关键词：

point defects; molecular beam epitaxy; photorefractive materials; semiconducting gallium arsenide;

D O I：

10.1016/S0022-0248(01)00644-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We report on the properties of GaAs/AlGaAs multiple quantum wells grown at medium temperature range 300-400 degreesC. The samples exhibit both of sharp exciton absorption and ultrafast carrier lifetime, which are suitable as photorefractive devices. Photoluminescence, absorption spectroscopy, optical transient current spectroscopy and pump-probe technique were used to characterize the materials grown on GaAs (0 0 1) on-axis or miscut substrates. Using a YAG:Nd laser as a pump source, the quenchable characteristics of EL2-like defects were observed in electroabsorption for the first rime. By optimizing growth parameters and device structure, the transient diffraction efficiency approaches 1.2% and 4.5% in non-degeneration four-wave mixing under Frantz-Keldysh and Stark geometry, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

引用

页码：117 / 122

页数：6

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