A Memristor-Based Spiking Neural Network With High Scalability and Learning Efficiency

被引:37
|
作者
Zhao, Zhenyu [1 ]
Qu, Lianhua [1 ]
Wang, Lei [1 ]
Deng, Quan [1 ]
Li, Nan [1 ]
Kang, Ziyang [1 ]
Guo, Shasha [1 ]
Xu, Weixia [1 ]
机构
[1] Natl Univ Def Technol, Coll Comp Sci & Technol, Changsha 410001, Peoples R China
基金
中国国家自然科学基金;
关键词
Spiking neural network; lateral inhibition; memristor; homeostasis; neuromorphic hardware; scalability; DEVICE;
D O I
10.1109/TCSII.2020.2980054
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Spike-timing dependent plasticity (STDP)-based spiking neural network (SNN) is a promising choice to realize unsupervised intelligent systems with a limited power budget. In addition to STDP, another two bio-inspired mechanisms of lateral inhibition and homeostasis are always implemented in the unsupervised training procedure of STDP-based SNNs. However, the existing methods to achieve lateral inhibition necessitate a great number of connections that are proportional to the square of the number of learning neurons, and the existing hardware solution of homeostasis demands complex circuits for each learning neuron, both of which challenge the hardware implementation of STDP-based SNNs. In this brief, we propose a novel SNN using memristor-based inhibitory synapses to realize the mechanisms of lateral inhibition and homeostasis with low hardware complexity. The proposed SNN can improve the network scalability by reducing the connection number for lateral inhibition from $N<^>{2}$ to $N$ and reduce the hardware overhead by leveraging the circuit of lateral inhibition to achieve homeostasis. Software simulations on the recognition task on MNIST dataset show that the proposed SNN achieves a 2 times higher learning efficiency with comparable accuracy. In addition, the challenging properties of realistic memristor devices, including limited number of resistive states, intrinsic parameter variation, and permanent open device, are added in the simulation to evaluate the robustness of our proposed approach.
引用
收藏
页码:931 / 935
页数:5
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