Perpendicular magnetic anisotropy of Co\Pt bilayers on ALD HfO2

被引：10

作者：

Vermeulen, Bart F. ^{[1
,2
]}

Wu, Jackson ^{[2
]}

Swerts, Johan ^{[2
]}

Couet, Sebastien ^{[2
]}

Linten, Dimitri ^{[2
]}

Radu, Iuliana P. ^{[2
]}

Temst, Kristiaan ^{[1
]}

Rampelberg, Geert ^{[3
]}

Detavernier, Christophe ^{[3
]}

Groeseneken, Guido ^{[2
,4
]}

Martens, Koen ^{[1
,2
]}

机构：

[1] Katholieke Univ Leuven, Dept Phys & Astron, Leuven, Belgium

[2] IMEC, Kapeldreef 75, Leuven, Belgium

[3] Univ Ghent, Solid State Phys, Ghent, Belgium

[4] Katholieke Univ Leuven, Dept Elect Engn, Leuven, Belgium

来源：

JOURNAL OF APPLIED PHYSICS | 2016年 / 120卷 / 16期

关键词：

COBALT FILMS; THIN-FILMS; MULTILAYERS;

D O I：

10.1063/1.4966121

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-kappa dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2\Co\Pt\Ru stack in N-2 with the K-eff of 0.25 mJ/m(2) as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co\Pt bilayer. High-kappa dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies. Published by AIP Publishing.

引用

页数：5

共 44 条

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