Long-wavelength MBE grown GaInNAs quantum well laser emitting at 1270 nm

被引：1
作者：
Alias, M. S. [1 ]
Maskuriy, F. [1 ]
Mitani, S. M. [1 ]
机构：
[1] TMR&D, Adv Phys Technol Lab, Cyberjaya 63000, Selangor, Malaysia
来源：
LASER PHYSICS | 2012年 / 22卷 / 01期
关键词：
MOLECULAR-BEAM EPITAXY; SEMICONDUCTOR-LASERS; DIODE-LASERS; OPTIMIZATION; SIMULATION; DIVERGENCE;
D O I：
10.1134/S1054660X1201001X
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
In this paper, we report on comprehensive theoretical optical properties analysis and experimental device electrical-optical characterization of long wavelength GaInNAs edge-emitting laser diode. The theoretical analysis demonstrates that a high quality GaInNAs active region and device design are devised, where high material gain near 1.3 mu m and optimal optical mode confinement are calculated. Experimentally, room temperature lasing emission around 1.27 mu m with threshold current densities of 670-810 A/cm(2) is obtained from the fabricated broad area GaInNAs edge-emitting laser grown by molecular beam epitaxy technique.
引用
收藏
页码：155 / 159
页数：5
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