Selective Emitter Formation by Laser Doping for Phosphorous-Doped n-Type Silicon Solar Cells

被引：11
|
作者：
Hirata, Kenji [1 ]
Saitoh, Takashi [1 ]
Ogane, Akiyoshi [1 ]
Sugimura, Emi [1 ]
Fuyuki, Takashi [1 ]
机构：
[1] Nara Inst Sci & Technol NAIST, Grad Sch Mat Sci, Nara 6300192, Japan
来源：
APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期
关键词：
D O I：
10.1143/APEX.5.016501
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Selective emitter formation for crystalline silicon (c-Si) solar cells is very important to increase conversion efficiency. Laser doping (LD) is a very simple method for selective emitter formation because the use of masks and photolithography is unnecessary. In this paper, we report an application of LD to form a selective emitter in n-type c-Si solar cells. Our results demonstrated that the doping profile of the selective emitter showed a high doping concentration and deep doping depth. The conversion efficiency of solar cells with selective emitter formed by LD was increased. In particular, the short-circuit current density was considerably increased. (C) 2012 The Japan Society of Applied Physics
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页数：3
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