Selective Emitter Formation by Laser Doping for Phosphorous-Doped n-Type Silicon Solar Cells

被引：11

作者：

Hirata, Kenji ^{[1
]}

Saitoh, Takashi ^{[1
]}

Ogane, Akiyoshi ^{[1
]}

Sugimura, Emi ^{[1
]}

Fuyuki, Takashi ^{[1
]}

机构：

[1] Nara Inst Sci & Technol NAIST, Grad Sch Mat Sci, Nara 6300192, Japan

来源：

APPLIED PHYSICS EXPRESS | 2012年 / 5卷 / 01期

关键词：

D O I：

10.1143/APEX.5.016501

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Selective emitter formation for crystalline silicon (c-Si) solar cells is very important to increase conversion efficiency. Laser doping (LD) is a very simple method for selective emitter formation because the use of masks and photolithography is unnecessary. In this paper, we report an application of LD to form a selective emitter in n-type c-Si solar cells. Our results demonstrated that the doping profile of the selective emitter showed a high doping concentration and deep doping depth. The conversion efficiency of solar cells with selective emitter formed by LD was increased. In particular, the short-circuit current density was considerably increased. (C) 2012 The Japan Society of Applied Physics

引用

页数：3

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