Structural characterisation of self-implanted Si after HT-HP treatment

Recovery of damages in implanted silicon is still not fully understood. In this work, self-implanted silicon Si:Si is a model material. The implantation-damaged area in Si:Si is under high quasi-hydrostatic stress. Therefore, the application of external hydrostatic pressure (HP) at annealing of Si:Si samples gives possibility to obtain valuable information on the stress-related effects during out-annealing of structural damages. Czochralski grown single crystalline silicon (Cz-Si) samples were subjected to the implantation with Si+ ions (silicon dose D = 5 x 10(16) cm(-2)) at 160keV energy (E). The Si:Si samples were treated at a high temperature (HT) up to 1130 degrees C under hydrostatic argon pressure up to 1.1 GPa for 5 h. Changes in the dielectric function (E) in both the as-implanted and HT-HP treated silicon samples have been determined. The considerable amelioration of both optical and structural properties of the self-implanted silicon samples for such treatment conditions like pressure, p = 1.1 Gpa; temperature, T = 800 degrees C; time, t = 5 h has been observed. For samples treated under 1.1 GPa and for 5 h, both real part (E 1) and imaginary part (82) of dielectric constant decreased with the increase of temperature in all spectral range. The agreement between results obtained by spectroscopic ellipsometry (SE) and other optical techniques has been found. (c) 2005 Published by Elsevier B.V.